STW13N60M2 Tech Spezifikatioune
STMicroelectronics - STW13N60M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW13N60M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | MDmesh™ II Plus | |
Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 110W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | STW13N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW13N60M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW13N60M2 | STW12NK95Z | STW13NK60Z | STW13NB60 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V | 900mOhm @ 5A, 10V | 550mOhm @ 4.5A, 10V | 540mOhm @ 6.5A, 10V |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 100µA | 4.5V @ 100µA | 5V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 10A (Tc) | 13A (Tc) | 13A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | MDmesh™ II Plus | SuperMESH™ | SuperMESH™ | PowerMESH™ |
Power Dissipation (Max) | 110W (Tc) | 230W (Tc) | 150W (Tc) | 190W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 100 V | 3500 pF @ 25 V | 2030 pF @ 25 V | 2600 pF @ 25 V |
Vgs (Max) | ±25V | ±30V | ±30V | ±30V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 600 V | 950 V | 600 V | 600 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | STW13N | STW12N | STW13 | STW13N |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 113 nC @ 10 V | 92 nC @ 10 V | 82 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden STW13N60M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW13N60M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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