STW12NK80Z Tech Spezifikatioune
STMicroelectronics - STW12NK80Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW12NK80Z
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | SuperMESH™ | |
Rds On (Max) @ Id, Vgs | 750mOhm @ 5.25A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2620 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | |
Basis Produktnummer | STW12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW12NK80Z.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW12NK80Z | STW12NK90Z | STW120NF10 | STW12NM60N |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | 11A (Tc) | 110A (Tc) | 10A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | SuperMESH™ | SuperMESH™ | STripFET™ II | MDmesh™ |
Rds On (Max) @ Id, Vgs | 750mOhm @ 5.25A, 10V | 880mOhm @ 5.5A, 10V | 10.5mOhm @ 60A, 10V | 410mOhm @ 5A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | 4.5V @ 100µA | 4V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2620 pF @ 25 V | 3500 pF @ 25 V | 5200 pF @ 25 V | 960 pF @ 50 V |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Entworf fir Source Voltage (Vdss) | 800 V | 900 V | 100 V | 600 V |
Power Dissipation (Max) | 190W (Tc) | 230W (Tc) | 312W (Tc) | 90W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V | 152 nC @ 10 V | 233 nC @ 10 V | 30.5 nC @ 10 V |
FET Feature | - | - | - | - |
Vgs (Max) | ±30V | ±30V | ±20V | ±25V |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Basis Produktnummer | STW12 | STW12 | STW120 | STW12N |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden STW12NK80Z PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW12NK80Z - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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