STW11NK100Z Tech Spezifikatioune
STMicroelectronics - STW11NK100Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW11NK100Z
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4.5V @ 100µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247-3 | |
| Serie | SuperMESH™ | |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 4.15A, 10V | |
| Power Dissipation (Max) | 230W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 1000 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Tc) | |
| Basis Produktnummer | STW11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW11NK100Z.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STW11NK100Z | STW10NK60Z | STW11NB80 | STW12N150K5 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Tc) | 10A (Tc) | 11A (Tc) | 7A (Tc) |
| Vgs (th) (Max) @ Id | 4.5V @ 100µA | 4.5V @ 250µA | 5V @ 250µA | 5V @ 100µA |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | 1370 pF @ 25 V | 2900 pF @ 25 V | 1360 pF @ 100 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Basis Produktnummer | STW11 | STW10 | STW11N | STW12 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | SuperMESH™ | SuperMESH™ | PowerMESH™ | MDmesh™ K5 |
| Power Dissipation (Max) | 230W (Tc) | 156W (Tc) | 190W (Tc) | 250W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V | 70 nC @ 10 V | 70 nC @ 10 V | 47 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Entworf fir Source Voltage (Vdss) | 1000 V | 600 V | 800 V | 1500 V |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 4.15A, 10V | 750mOhm @ 4.5A, 10V | 800mOhm @ 5.5A, 10V | 1.9Ohm @ 3.5A, 10V |
| FET Feature | - | - | - | - |
Eroflueden STW11NK100Z PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW11NK100Z - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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