STW11NB80 Tech Spezifikatioune
STMicroelectronics - STW11NB80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW11NB80
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | PowerMESH™ | |
Rds On (Max) @ Id, Vgs | 800mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | STW11N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW11NB80.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW11NB80 | STW120NF10 | STW11NK100Z | STW11NK90Z |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Entworf fir Source Voltage (Vdss) | 800 V | 100 V | 1000 V | 900 V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 110A (Tc) | 8.3A (Tc) | 9.2A (Tc) |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STW11N | STW120 | STW11 | STW11 |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 233 nC @ 10 V | 162 nC @ 10 V | 115 nC @ 10 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4.5V @ 100µA | 4.5V @ 100µA |
Rds On (Max) @ Id, Vgs | 800mOhm @ 5.5A, 10V | 10.5mOhm @ 60A, 10V | 1.38Ohm @ 4.15A, 10V | 980mOhm @ 4.6A, 10V |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | 5200 pF @ 25 V | 3500 pF @ 25 V | 3000 pF @ 25 V |
Power Dissipation (Max) | 190W (Tc) | 312W (Tc) | 230W (Tc) | 200W (Tc) |
Serie | PowerMESH™ | STripFET™ II | SuperMESH™ | SuperMESH™ |
Eroflueden STW11NB80 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW11NB80 - STMicroelectronics.
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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