STW10NK80Z Tech Spezifikatioune
STMicroelectronics - STW10NK80Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW10NK80Z
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | SuperMESH™ | |
Rds On (Max) @ Id, Vgs | 900mOhm @ 4.5A, 10V | |
Power Dissipation (Max) | 160W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | |
Basis Produktnummer | STW10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW10NK80Z.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW10NK80Z | STW10NK60Z | STW10N95K5 | STW11NK90Z |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | 70 nC @ 10 V | 22 nC @ 10 V | 115 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | 10A (Tc) | 8A (Tc) | 9.2A (Tc) |
Power Dissipation (Max) | 160W (Tc) | 156W (Tc) | 130W (Tc) | 200W (Tc) |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 25 V | 1370 pF @ 25 V | 630 pF @ 100 V | 3000 pF @ 25 V |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Basis Produktnummer | STW10 | STW10 | STW10 | STW11 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 800 V | 600 V | 950 V | 900 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 900mOhm @ 4.5A, 10V | 750mOhm @ 4.5A, 10V | 800mOhm @ 4A, 10V | 980mOhm @ 4.6A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | SuperMESH™ | SuperMESH™ | SuperMESH5™ | SuperMESH™ |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | 4.5V @ 250µA | 5V @ 100µA | 4.5V @ 100µA |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Eroflueden STW10NK80Z PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW10NK80Z - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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