STV160NF02LAT4 Tech Spezifikatioune
STMicroelectronics - STV160NF02LAT4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STV160NF02LAT4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±15V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 10-PowerSO | |
| Serie | STripFET™ | |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 210W (Tc) | |
| Package / Case | PowerSO-10 Exposed Bottom Pad | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 160A (Tc) | |
| Basis Produktnummer | STV160 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STV160NF02LAT4.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | STV160NF02LAT4 | STV160NF03LT4 | STV160NF02LT4 | STV2112B |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±15V | ±15V | ±15V | - |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | - |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 5V, 10V | - |
| Power Dissipation (Max) | 210W (Tc) | 210W (Tc) | 210W (Tc) | - |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Operatioun Temperatur | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) | - |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V | 2.8mOhm @ 80A, 10V | 2.5mOhm @ 80A, 10V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 160A (Tc) | 160A (Tc) | 160A (Tc) | - |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V | 140 nC @ 10 V | 160 nC @ 10 V | - |
| Package / Case | PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad | PowerSO-10 Exposed Bottom Pad | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 15 V | 4700 pF @ 25 V | 4800 pF @ 15 V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Supplier Device Package | 10-PowerSO | 10-PowerSO | 10-PowerSO | - |
| Serie | STripFET™ | STripFET™ | STripFET™ II | - |
| Basis Produktnummer | STV160 | STV160 | STV160 | - |
Eroflueden STV160NF02LAT4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STV160NF02LAT4 - STMicroelectronics.
STV2112BSTMicroelectronicsSTV160NF03LASTMicroelectronics
STV108APSMARFASICSTV108DSMARFASIC
STV2050ASTMicroelectronicsIC VIDEO DGTL CONVERGENCE 80QFPSTV105APSMARTASICSTV108ASMARTASICSTV2180ASTMicroelectronicsSTV108SMARTASICSTV2050ACMPSTMicroelectronicsSTV102SMARFASICSTV160NF03LT4STMicroelectronicsMOSFET N-CH 30V 160A 10POWERSOSTV2050ATRSTMicroelectronicsSTV160NF02LT4STMicroelectronicsMOSFET N-CH 20V 160A 10POWERSOSTV1602AT33STMicroelectronicsSTV160NF02LASTMicroelectronicsSTV1601SONYSTV2110ASGS| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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