STU65N3LLH5 Tech Spezifikatioune
STMicroelectronics - STU65N3LLH5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STU65N3LLH5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±22V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | STripFET™ V | |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 32.5A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 65A (Tc) | |
Basis Produktnummer | STU65N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STU65N3LLH5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STU65N3LLH5 | STU6N65K3 | STU6N62K3 | STU6N65M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 25 V | 880 pF @ 50 V | 875 pF @ 50 V | 226 pF @ 100 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 65A (Tc) | 5.4A (Tc) | 5.5A (Tc) | 4A (Tc) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 32.5A, 10V | 1.3Ohm @ 2.7A, 10V | 1.2Ohm @ 2.8A, 10V | 1.35Ohm @ 2A, 10V |
Serie | STripFET™ V | SuperMESH3™ | SuperMESH3™ | MDmesh™ |
Vgs (th) (Max) @ Id | 3V @ 250µA | 4.5V @ 50µA | 4.5V @ 50µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V | 33 nC @ 10 V | 30 nC @ 10 V | 9.8 nC @ 10 V |
Power Dissipation (Max) | 50W (Tc) | 110W (Tc) | 90W (Tc) | 60W (Tc) |
Vgs (Max) | ±22V | ±30V | ±30V | ±25V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | STU65N | STU6N65 | STU6N62 | STU6N65 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Entworf fir Source Voltage (Vdss) | 30 V | 650 V | 620 V | 650 V |
Supplier Device Package | I-PAK | TO-251 (IPAK) | TO-251 (IPAK) | TO-251 (IPAK) |
Eroflueden STU65N3LLH5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STU65N3LLH5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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