STU4N62K3 Tech Spezifikatioune
STMicroelectronics - STU4N62K3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STU4N62K3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251 (IPAK) | |
Serie | SuperMESH3™ | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 1.9A, 10V | |
Power Dissipation (Max) | 70W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 620 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.8A (Tc) | |
Basis Produktnummer | STU4N62 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STU4N62K3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STU4N62K3 | STU5N95K3 | STU5N65M6 | STU5N60M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Basis Produktnummer | STU4N62 | STU5N95 | STU5N65 | STU5N60 |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 5V @ 100µA | 3.75V @ 250µA | 4V @ 250µA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.8A (Tc) | 4A (Tc) | 4A (Tc) | 3.7A (Tc) |
Vgs (Max) | ±30V | ±30V | ±25V | ±25V |
Entworf fir Source Voltage (Vdss) | 620 V | 950 V | 650 V | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 19 nC @ 10 V | 5.1 nC @ 10 V | 4.5 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Supplier Device Package | TO-251 (IPAK) | TO-251 (IPAK) | TO-251 (IPAK) | I-PAK |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 2Ohm @ 1.9A, 10V | 3.5Ohm @ 2A, 10V | 1.3Ohm @ 2A, 10V | 1.4Ohm @ 1.85A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V | 460 pF @ 25 V | 170 pF @ 100 V | 165 pF @ 100 V |
Serie | SuperMESH3™ | SuperMESH3™ | MDmesh™ M6 | MDmesh™ II Plus |
Package protegéieren | Tube | Tube | Tube | Tube |
Power Dissipation (Max) | 70W (Tc) | 90W (Tc) | 45W (Tc) | 45W (Tc) |
Eroflueden STU4N62K3 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STU4N62K3 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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