STT6N3LLH6 Tech Spezifikatioune
STMicroelectronics - STT6N3LLH6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STT6N3LLH6
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-6 | |
| Serie | DeepGATE™, STripFET™ VI | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3A, 10V | |
| Power Dissipation (Max) | 1.6W (Tc) | |
| Package / Case | SOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 283 pF @ 24 V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
| Basis Produktnummer | STT6N3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STT6N3LLH6.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STT6N3LLH6 | STT5PF20V | STT7P2UH7 | STT60GK14 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | SIRECTIFIER |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 5A (Tc) | 7A (Tc) | - |
| Basis Produktnummer | STT6N3 | STT5P | STT7P | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3A, 10V | 80mOhm @ 2.5A, 4.5V | 22.5mOhm @ 3.5A, 4.5V | - |
| Package / Case | SOT-23-6 | SOT-23-6 | SOT-23-6 | - |
| Supplier Device Package | SOT-23-6 | SOT-23-6 | SOT-23-6 | - |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.5 V | 4.5 nC @ 2.5 V | 22 nC @ 4.5 V | - |
| FET Typ | N-Channel | P-Channel | P-Channel | - |
| Input Capacitance (Ciss) (Max) @ Vds | 283 pF @ 24 V | 412 pF @ 15 V | 2390 pF @ 16 V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 1.5V, 4.5V | - |
| Serie | DeepGATE™, STripFET™ VI | STripFET™ II | STripFET™ | - |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 450mV @ 250µA (Min) | 1V @ 250µA | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 20 V | - |
| Power Dissipation (Max) | 1.6W (Tc) | 1.6W (Tc) | 1.6W (Tc) | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Vgs (Max) | ±20V | ±8V | ±8V | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Eroflueden STT6N3LLH6 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STT6N3LLH6 - STMicroelectronics.
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STT800N16P55Cypress Semiconductor (Infineon Technologies)IGBT ModuleSTT7P2UH7STMicroelectronicsMOSFET P-CH 20V 7A SOT23-6| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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