STS8DN3LLH5 Tech Spezifikatioune
STMicroelectronics - STS8DN3LLH5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STS8DN3LLH5
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | STripFET™ V | |
Rds On (Max) @ Id, Vgs | 19mOhm @ 5A, 10V | |
Power - Max | 2.7W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 724pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | STS8DN3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STS8DN3LLH5.
Produktiounsattriff | ||||
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Part Number | STS8DN3LLH5 | STS8DN6LF6AG | STS9D8NH3LL | STS8DNH3LL |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Supplier Device Package | 8-SOIC | 8-SO | 8-SOIC | 8-SOIC |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Basis Produktnummer | STS8DN3 | STS8DN6 | STS9D8 | STS8DN |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 19mOhm @ 5A, 10V | 24mOhm @ 4A, 10V | 22mOhm @ 4A, 10V | 22mOhm @ 4A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A | 8A (Ta) | 8A, 9A | 8A |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Power - Max | 2.7W | 3.2W | 2W | 2W |
Serie | STripFET™ V | Automotive, AEC-Q101, STripFET™ F6 | STripFET™ | STripFET™ III |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 1V @ 250µA | 2.5V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Entworf fir Source Voltage (Vdss) | 30V | 60V | 30V | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 724pF @ 25V | 1340pF @ 25V | 857pF @ 25V | 857pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | 27nC @ 10V | 10nC @ 4.5V | 10nC @ 4.5V |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden STS8DN3LLH5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STS8DN3LLH5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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