STS4DPFS30L Tech Spezifikatioune
STMicroelectronics - STS4DPFS30L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STS4DPFS30L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | STripFET™ | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 2.5A, 10V | |
Power Dissipation (Max) | 2.5W (Tc) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V | |
FET Typ | P-Channel | |
FET Feature | Schottky Diode (Isolated) | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
Basis Produktnummer | STS4D |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STS4DPFS30L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STS4DPFS30L | STS5NF60L | STS4DNFS30L | STS4NF100 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | STripFET™ | STripFET™ | STripFET™ | STripFET™ II |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 55mOhm @ 2.5A, 10V | 55mOhm @ 2.5A, 10V | 55mOhm @ 2A, 10V | 70mOhm @ 2A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | 1250 pF @ 25 V | 330 pF @ 25 V | 870 pF @ 25 V |
Power Dissipation (Max) | 2.5W (Tc) | 2.5W (Tc) | 2W (Tc) | 2.5W (Ta) |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V | 17 nC @ 5 V | 9 nC @ 5 V | 41 nC @ 10 V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 1V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 5A (Tc) | 4A (Tc) | 4A (Tc) |
Basis Produktnummer | STS4D | STS5NF60 | STS4D | STS4N |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | Schottky Diode (Isolated) | - | Schottky Diode (Isolated) | - |
Vgs (Max) | ±16V | ±20V | ±16V | ±20V |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 30 V | 100 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 5V, 10V | 10V |
Eroflueden STS4DPFS30L PDF DataDhusts an STMicroelectronics Dokumentatioun fir STS4DPFS30L - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
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Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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