STS4DNF60 Tech Spezifikatioune
STMicroelectronics - STS4DNF60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STS4DNF60
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | STripFET™ | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | STS4D |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STS4DNF60.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STS4DNF60 | STS4DPF30L | STS4DNF60L | STS4DNF30L |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2A, 10V | 80mOhm @ 2A, 10V | 55mOhm @ 2A, 10V | 50mOhm @ 2A, 10V |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Power - Max | 2W | 2W | 2W | 2W |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 25V | 1350pF @ 25V | 1030pF @ 25V | 330pF @ 25V |
| Serie | STripFET™ | STripFET™ | STripFET™ | STripFET™ |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V | 16nC @ 5V | 15nC @ 4.5V | 9nC @ 10V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 1V @ 250µA | 2.5V @ 250µA | 1V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 60V | 30V | 60V | 30V |
| Basis Produktnummer | STS4D | STS4D | STS4DNF60 | STS4D |
| FET Feature | Logic Level Gate | - | Logic Level Gate | Logic Level Gate |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A | 4A | 4A | 4A |
Eroflueden STS4DNF60 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STS4DNF60 - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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