STQ1NK80ZR-AP Tech Spezifikatioune
STMicroelectronics - STQ1NK80ZR-AP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STQ1NK80ZR-AP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-92-3 | |
Serie | SuperMESH™ | |
Rds On (Max) @ Id, Vgs | 16Ohm @ 500mA, 10V | |
Power Dissipation (Max) | 3W (Tc) | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
Package protegéieren | Cut Tape (CT) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA (Tc) | |
Basis Produktnummer | STQ1NK80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STQ1NK80ZR-AP.
Produktiounsattriff | ||||
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Part Number | STQ1NK80ZR-AP | STQ3N45K3-AP | STQ2HNK60ZR-AP | STQ2NK60ZR-AP |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA (Tc) | 600mA (Tc) | 500mA (Tc) | 400mA (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Power Dissipation (Max) | 3W (Tc) | 3W (Tc) | 3W (Tc) | 3W (Tc) |
Entworf fir Source Voltage (Vdss) | 800 V | 450 V | 600 V | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V | 6 nC @ 10 V | 15 nC @ 10 V | 10 nC @ 10 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STQ1NK80 | STQ3 | STQ2HNK60 | STQ2 |
Supplier Device Package | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 |
Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V | 150 pF @ 25 V | 280 pF @ 25 V | 170 pF @ 25 V |
Serie | SuperMESH™ | SuperMESH3™ | SuperMESH™ | SuperMESH™ |
Package protegéieren | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 4.5V @ 50µA | 4.5V @ 50µA | 4.5V @ 50µA |
Rds On (Max) @ Id, Vgs | 16Ohm @ 500mA, 10V | 3.8Ohm @ 500mA, 10V | 4.8Ohm @ 1A, 10V | 8Ohm @ 700mA, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden STQ1NK80ZR-AP PDF DataDhusts an STMicroelectronics Dokumentatioun fir STQ1NK80ZR-AP - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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