STP6N52K3 Tech Spezifikatioune
STMicroelectronics - STP6N52K3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP6N52K3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | SuperMESH3™ | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V | |
Power Dissipation (Max) | 70W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 525 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
Basis Produktnummer | STP6N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP6N52K3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP6N52K3 | STP6N80K5 | STP6N60M2 | STP6N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | 7.5 nC @ 10 V | 8 nC @ 10 V | 34 nC @ 10 V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Entworf fir Source Voltage (Vdss) | 525 V | 800 V | 600 V | 620 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 5V @ 100µA | 4V @ 250µA | 4.5V @ 50µA |
Basis Produktnummer | STP6N | STP6N80 | STP6N60 | STP6N62 |
Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 50 V | 255 pF @ 100 V | 232 pF @ 100 V | 875 pF @ 50 V |
Vgs (Max) | ±30V | 30V | ±25V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 4.5A (Tc) | 4.5A (Tc) | 5.5A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | SuperMESH3™ | SuperMESH5™ | MDmesh™ II Plus | SuperMESH3™ |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V | 1.6Ohm @ 2A, 10V | 1.2Ohm @ 2.25A, 10V | 1.2Ohm @ 2.8A, 10V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 70W (Tc) | 85W (Tc) | 60W (Tc) | 90W (Tc) |
Eroflueden STP6N52K3 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP6N52K3 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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