STP4N80K5 Tech Spezifikatioune
STMicroelectronics - STP4N80K5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP4N80K5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | SuperMESH5™ | |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V | |
Power Dissipation (Max) | 60W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | |
Basis Produktnummer | STP4N80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP4N80K5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP4N80K5 | STP4LN80K5 | STP4N52K3 | STP4N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V | 2.6Ohm @ 1A, 10V | 2.6Ohm @ 1.25A, 10V | 1.95Ohm @ 1.9A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Power Dissipation (Max) | 60W (Tc) | 60W (Tc) | 45W (Tc) | 70W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V | 122 pF @ 100 V | 334 pF @ 100 V | 450 pF @ 50 V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Entworf fir Source Voltage (Vdss) | 800 V | 800 V | 525 V | 620 V |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | 3.7 nC @ 10 V | 11 nC @ 10 V | 14 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | 3A (Tc) | 2.5A (Tc) | 3.8A (Tc) |
Basis Produktnummer | STP4N80 | STP4LN80 | STP4N52 | STP4N |
Vgs (th) (Max) @ Id | 5V @ 100µA | 5V @ 100µA | 4.5V @ 50µA | 4.5V @ 50µA |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | SuperMESH5™ | MDmesh™ K5 | SuperMESH3™ | SuperMESH3™ |
Eroflueden STP4N80K5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP4N80K5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.