STP42N65M5 Tech Spezifikatioune
STMicroelectronics - STP42N65M5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP42N65M5
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | MDmesh™ V | |
Rds On (Max) @ Id, Vgs | 79mOhm @ 16.5A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | |
Basis Produktnummer | STP42 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP42N65M5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP42N65M5 | STP40NF12 | STP40NF20 | STP40NS15 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Serie | MDmesh™ V | STripFET™ II | STripFET™ | MESH OVERLAY™ |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 175°C (TJ) |
Power Dissipation (Max) | 190W (Tc) | 150W (Tc) | 160W (Tc) | 140W (Tc) |
Vgs (Max) | ±25V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 40A (Tc) | 40A (Tc) | 40A (Tc) |
Basis Produktnummer | STP42 | STP40 | STP40 | STP40N |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | 80 nC @ 10 V | 75 nC @ 10 V | 110 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 650 V | 120 V | 200 V | 150 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 100 V | 1880 pF @ 25 V | 2500 pF @ 25 V | 2400 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 79mOhm @ 16.5A, 10V | 32mOhm @ 20A, 10V | 45mOhm @ 20A, 10V | 52mOhm @ 40A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STP42N65M5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP42N65M5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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