STP36N55M5 Tech Spezifikatioune
STMicroelectronics - STP36N55M5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP36N55M5
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | MDmesh™ V | |
Rds On (Max) @ Id, Vgs | 80mOhm @ 16.5A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 550 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | |
Basis Produktnummer | STP36N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP36N55M5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP36N55M5 | STP34NM60N | STP35N60DM2 | STP34NM60ND |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 29A (Tc) | 28A (Tc) | 29A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | 80 nC @ 10 V | 54 nC @ 10 V | 80.4 nC @ 10 V |
Basis Produktnummer | STP36N | STP34 | STP35 | STP34 |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Power Dissipation (Max) | 190W (Tc) | 250W (Tc) | 210W (Tc) | 190W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 550 V | 600 V | 600 V | 600 V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Serie | MDmesh™ V | MDmesh™ II | MDmesh™ DM2 | FDmesh™ II |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Rds On (Max) @ Id, Vgs | 80mOhm @ 16.5A, 10V | 105mOhm @ 14.5A, 10V | 110mOhm @ 14A, 10V | 110mOhm @ 14.5A, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 100 V | 2722 pF @ 100 V | 2400 pF @ 100 V | 2785 pF @ 50 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden STP36N55M5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP36N55M5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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