STP2NK90Z Tech Spezifikatioune
STMicroelectronics - STP2NK90Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP2NK90Z
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220 | |
| Serie | SuperMESH™ | |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1.05A, 10V | |
| Power Dissipation (Max) | 70W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 900 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.1A (Tc) | |
| Basis Produktnummer | STP2NK90 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP2NK90Z.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STP2NK90Z | STP2NK100Z | STP2N95K5 | STP2NK60Z |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.1A (Tc) | 1.85A (Tc) | 2A (Tc) | 1.4A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V | 499 pF @ 25 V | 105 pF @ 100 V | 170 pF @ 25 V |
| Vgs (Max) | ±30V | ±30V | 30V | ±30V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1.05A, 10V | 8.5Ohm @ 900mA, 10V | 5Ohm @ 1A, 10V | 8Ohm @ 700mA, 10V |
| Basis Produktnummer | STP2NK90 | STP2NK100 | STP2N95 | STP2N |
| Vgs (th) (Max) @ Id | 4.5V @ 50µA | 4.5V @ 50µA | 5V @ 100µA | 4.5V @ 50µA |
| Serie | SuperMESH™ | SuperMESH™ | SuperMESH5™ | SuperMESH™ |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 16 nC @ 10 V | 10 nC @ 10 V | 10 nC @ 10 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 70W (Tc) | 70W (Tc) | 45W (Tc) | 45W (Tc) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 900 V | 1000 V | 950 V | 600 V |
Eroflueden STP2NK90Z PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP2NK90Z - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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