STP200NF04L Tech Spezifikatioune
STMicroelectronics - STP200NF04L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP200NF04L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | STripFET™ II | |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | STP200 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP200NF04L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP200NF04L | STP20N65M5 | STP200N4F3 | STP20N90K5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V | 190mOhm @ 9A, 10V | 4.4mOhm @ 80A, 10V | 250mOhm @ 10A, 10V |
Basis Produktnummer | STP200 | STP20 | STP200 | STP20 |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 4.5 V | 45 nC @ 10 V | 75 nC @ 10 V | 40 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 40 V | 650 V | 40 V | 900 V |
Vgs (Max) | ±16V | ±25V | ±20V | ±30V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 300W (Tc) | 130W (Tc) | 300W (Tc) | 250W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V | 1345 pF @ 100 V | 5100 pF @ 25 V | 1500 pF @ 100 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 100µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 18A (Tc) | 120A (Tc) | 20A (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | STripFET™ II | MDmesh™ V | STripFET™ | MDmesh™ K5 |
Eroflueden STP200NF04L PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP200NF04L - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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