STP14NM50N Tech Spezifikatioune
STMicroelectronics - STP14NM50N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP14NM50N
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 100µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | MDmesh™ II | |
Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
Basis Produktnummer | STP14 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP14NM50N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP14NM50N | STP14NK60Z | STP150N3LLH6 | STP14NK50Z |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V | 500mOhm @ 6A, 10V | 3.3mOhm @ 40A, 10V | 380mOhm @ 6A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 13.5A (Tc) | 80A (Tc) | 14A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4V @ 100µA | 4.5V @ 100µA | 2.5V @ 250µA | 4.5V @ 100µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 90W (Tc) | 160W (Tc) | 110W (Tc) | 150W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STP14 | STP14N | STP150 | STP14 |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Serie | MDmesh™ II | SuperMESH™ | DeepGATE™, STripFET™ VI | SuperMESH™ |
Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 50 V | 2220 pF @ 25 V | 4040 pF @ 25 V | 2000 pF @ 25 V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 500 V | 600 V | 30 V | 500 V |
Vgs (Max) | ±25V | ±30V | ±20V | ±30V |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 75 nC @ 10 V | 40 nC @ 4.5 V | 92 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden STP14NM50N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP14NM50N - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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