STP13NM60N Tech Spezifikatioune
STMicroelectronics - STP13NM60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP13NM60N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | MDmesh™ II | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | STP13 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP13NM60N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP13NM60N | STP13N80K5 | STP13NM60ND | STP140NF75 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 100µA | 5V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±25V | ±30V | ±25V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 29 nC @ 10 V | 24.5 nC @ 10 V | 218 nC @ 10 V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Entworf fir Source Voltage (Vdss) | 600 V | 800 V | 600 V | 75 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | MDmesh™ II | SuperMESH5™ | FDmesh™ II | STripFET™ III |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STP13 | STP13 | STP13 | STP140 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V | 870 pF @ 100 V | 845 pF @ 50 V | 5000 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 90W (Tc) | 190W (Tc) | 109W (Tc) | 310W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 12A (Tc) | 11A (Tc) | 120A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V | 450mOhm @ 6A, 10V | 380mOhm @ 5.5A, 10V | 7.5mOhm @ 70A, 10V |
Eroflueden STP13NM60N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP13NM60N - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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