STP110N8F6 Tech Spezifikatioune
STMicroelectronics - STP110N8F6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP110N8F6
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | STripFET™ F6 | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V | |
Power Dissipation (Max) | 200W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 110A (Tc) | |
Basis Produktnummer | STP110 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP110N8F6.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP110N8F6 | STP110N55F6 | STP110N8F7 | STP11N65M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 80 V | 55 V | 80 V | 650 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 120 nC @ 10 V | 46.8 nC @ 10 V | 12.5 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Basis Produktnummer | STP110 | STP110 | STP110 | STP11 |
Serie | STripFET™ F6 | DeepGATE™, STripFET™ VI | STripFET™ | MDmesh™ II Plus |
Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 40 V | 8350 pF @ 25 V | 3435 pF @ 40 V | 410 pF @ 100 V |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V | 5.2mOhm @ 60A, 10V | 7.5mOhm @ 40A, 10V | 670mOhm @ 3.5A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 110A (Tc) | 110A (Tc) | 80A (Tc) | 7A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±25V |
Power Dissipation (Max) | 200W (Tc) | 150W (Tc) | 170W (Tc) | 85W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden STP110N8F6 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP110N8F6 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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