STP110N10F7 Tech Spezifikatioune
STMicroelectronics - STP110N10F7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP110N10F7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | DeepGATE™, STripFET™ VII | |
Rds On (Max) @ Id, Vgs | 7mOhm @ 55A, 10V | |
Power Dissipation (Max) | 150W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 110A (Tc) | |
Basis Produktnummer | STP110 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP110N10F7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP110N10F7 | STP110N55F6 | STP10NK80ZFP | STP110N7F6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Supplier Device Package | TO-220 | TO-220 | TO-220FP | TO-220 |
Serie | DeepGATE™, STripFET™ VII | DeepGATE™, STripFET™ VI | SuperMESH™ | STripFET™ F6 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 110A (Tc) | 110A (Tc) | 9A (Tc) | 110A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 120 nC @ 10 V | 72 nC @ 10 V | 100 nC @ 10 V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 Full Pack | TO-220-3 |
Power Dissipation (Max) | 150W (Tc) | 150W (Tc) | 40W (Tc) | 176W (Tc) |
Basis Produktnummer | STP110 | STP110 | STP10 | STP110 |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V | 8350 pF @ 25 V | 2180 pF @ 25 V | 5850 pF @ 25 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 55 V | 800 V | 68 V |
Rds On (Max) @ Id, Vgs | 7mOhm @ 55A, 10V | 5.2mOhm @ 60A, 10V | 900mOhm @ 4.5A, 10V | 6.5mOhm @ 55A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4.5V @ 100µA | 4V @ 250µA |
Eroflueden STP110N10F7 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP110N10F7 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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