STP10P6F6 Tech Spezifikatioune
STMicroelectronics - STP10P6F6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP10P6F6
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | DeepGATE™, STripFET™ VI | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V | |
Power Dissipation (Max) | 30W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 48 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
Basis Produktnummer | STP10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP10P6F6.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP10P6F6 | STP110N7F6 | STP10NM65N | STP110N8F6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Vgs (Max) | ±20V | ±20V | ±25V | ±20V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V | 100 nC @ 10 V | 25 nC @ 10 V | 150 nC @ 10 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4.5V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V | 6.5mOhm @ 55A, 10V | 480mOhm @ 4.5A, 10V | 6.5mOhm @ 55A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | STP10 | STP110 | STP10 | STP110 |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Power Dissipation (Max) | 30W (Tc) | 176W (Tc) | 90W (Tc) | 200W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 48 V | 5850 pF @ 25 V | 850 pF @ 50 V | 9130 pF @ 40 V |
Entworf fir Source Voltage (Vdss) | 60 V | 68 V | 650 V | 80 V |
Serie | DeepGATE™, STripFET™ VI | STripFET™ F6 | MDmesh™ II | STripFET™ F6 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 110A (Tc) | 9A (Tc) | 110A (Tc) |
Operatioun Temperatur | 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden STP10P6F6 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP10P6F6 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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