STL45N10F7AG Tech Spezifikatioune
STMicroelectronics - STL45N10F7AG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STL45N10F7AG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerFlat™ (5x6) | |
Serie | Automotive, AEC-Q101, STripFET™ F7 | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 9A, 10V | |
Power Dissipation (Max) | 72W (Tc) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
Basis Produktnummer | STL45 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STL45N10F7AG.
Produktiounsattriff | ||||
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Part Number | STL45N10F7AG | STL42P4LLF6 | STL42P6LLF6 | STL40N10F7 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Basis Produktnummer | STL45 | STL42 | STL42 | STL40 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | PowerFlat™ (5x6) | PowerFlat™ (5x6) | PowerFlat™ (5x6) | PowerFlat™ (5x6) |
Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V | 22 nC @ 4.5 V | 30 nC @ 4.5 V | 19 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 42A (Tc) | 42A (Tc) | 40A (Tc) |
Power Dissipation (Max) | 72W (Tc) | 75W (Tc) | 100W (Tc) | 5W (Ta), 70W (Tc) |
FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | 175°C (TJ) | 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 50 V | 2850 pF @ 25 V | 3780 pF @ 25 V | 1270 pF @ 50 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 10V |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 24mOhm @ 9A, 10V | 18mOhm @ 5A, 10V | 26mOhm @ 4.5A, 10V | 24mOhm @ 10A, 10V |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
Entworf fir Source Voltage (Vdss) | 100 V | 40 V | 60 V | 100 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | Automotive, AEC-Q101, STripFET™ F7 | STripFET™ F6 | STripFET™ F6 | DeepGATE™, STripFET™ VII |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 4.5V @ 250µA |
Eroflueden STL45N10F7AG PDF DataDhusts an STMicroelectronics Dokumentatioun fir STL45N10F7AG - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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