STL3N10F7 Tech Spezifikatioune
STMicroelectronics - STL3N10F7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STL3N10F7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerFlat™ (2x2) | |
Serie | DeepGATE™, STripFET™ VII | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 10V | |
Power Dissipation (Max) | 2.4W (Tc) | |
Package / Case | 6-PowerWDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 408 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | STL3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STL3N10F7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STL3N10F7 | STL42N65M5 | STL3N65M2 | STL3P6F6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Serie | DeepGATE™, STripFET™ VII | MDmesh™ V | MDmesh™ M2 | * |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 5V @ 250µA | 4V @ 250µA | - |
Package / Case | 6-PowerWDFN | 8-PowerVDFN | 8-PowerVDFN | - |
Input Capacitance (Ciss) (Max) @ Vds | 408 pF @ 25 V | 4650 pF @ 100 V | 155 pF @ 100 V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 4A (Ta), 34A (Tc) | 2.3A (Tc) | - |
Vgs (Max) | ±20V | ±25V | ±25V | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 2.4W (Tc) | 3W (Ta), 208W (Tc) | 22W (Tc) | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Supplier Device Package | PowerFlat™ (2x2) | PowerFlat™ (8x8) HV | PowerFlat™ (3.3x3.3) | - |
Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V | 100 nC @ 10 V | 5 nC @ 10 V | - |
Entworf fir Source Voltage (Vdss) | 100 V | 650 V | 650 V | - |
Basis Produktnummer | STL3 | STL42 | STL3 | STL3P6 |
Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 10V | 79mOhm @ 16.5A, 10V | 1.8Ohm @ 1A, 10V | - |
Eroflueden STL3N10F7 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STL3N10F7 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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