STL25N60M2-EP Tech Spezifikatioune
STMicroelectronics - STL25N60M2-EP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STL25N60M2-EP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerFlat™ (8x8) HV | |
Serie | MDmesh™ M2-EP | |
Rds On (Max) @ Id, Vgs | 205mOhm @ 8A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
Basis Produktnummer | STL25 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STL25N60M2-EP.
Produktiounsattriff | ||||
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Part Number | STL25N60M2-EP | STL24NM60N | STL26N65DM2 | STL260N4LF7 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 650 V | 40 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±25V | ±25V | ±25V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
Basis Produktnummer | STL25 | STL24 | STL26 | - |
Supplier Device Package | PowerFlat™ (8x8) HV | PowerFlat™ (8x8) HV | PowerFlat™ (8x8) HV | PowerFlat™ (5x6) |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 46 nC @ 10 V | 35.5 nC @ 10 V | 42 nC @ 4.5 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 3.3A (Ta), 16A (Tc) | 20A (Tc) | 120A (Tc) |
Serie | MDmesh™ M2-EP | MDmesh™ II | MDmesh™ DM2 | STripFET™ F7 |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | 5V @ 250µA | 5V @ 250µA | 2.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 100 V | 1400 pF @ 50 V | 1480 pF @ 100 V | 6000 pF @ 25 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 125W (Tc) | 3W (Ta), 125W (Tc) | 140W (Tc) | 188W (Tc) |
Rds On (Max) @ Id, Vgs | 205mOhm @ 8A, 10V | 215mOhm @ 8A, 10V | 206mOhm @ 10A, 10V | 1.1mOhm @ 25A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STL25N60M2-EP PDF DataDhusts an STMicroelectronics Dokumentatioun fir STL25N60M2-EP - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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