STL11N3LLH6 Tech Spezifikatioune
STMicroelectronics - STL11N3LLH6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STL11N3LLH6
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerFlat™ (3.3x3.3) | |
Serie | DeepGATE™, STripFET™ VI | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 2W (Ta), 50W (Tc) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 24 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | STL11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STL11N3LLH6.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STL11N3LLH6 | STL10N65M2 | STL110N4F7AG | STL110NS3LLH7 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Power Dissipation (Max) | 2W (Ta), 50W (Tc) | 48W (Tc) | 94W (Tc) | 4W (Ta), 75W (Tc) |
Entworf fir Source Voltage (Vdss) | 30 V | 650 V | 40 V | 30 V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | STL11 | STL10 | STL110 | STL110 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 24 V | 315 pF @ 100 V | 1150 pF @ 25 V | 2110 pF @ 25 V |
Serie | DeepGATE™, STripFET™ VI | - | Automotive, AEC-Q101, STripFET™ F7 | STripFET™ H7 |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V | 10.3 nC @ 10 V | 15 nC @ 10 V | 13.7 nC @ 4.5 V |
Supplier Device Package | PowerFlat™ (3.3x3.3) | PowerFlat™ (5x6) HV | PowerFlat™ (5x6) | PowerFlat™ (5x6) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 5.5A, 10V | 1Ohm @ 2.5A, 10V | 4mOhm @ 54A, 10V | 3.4mOhm @ 14A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 4.5A (Tc) | 108A (Tc) | 120A (Tc) |
Vgs (Max) | ±20V | ±25V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | 4V @ 250µA | 4V @ 250µA | 2.3V @ 1mA |
Eroflueden STL11N3LLH6 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STL11N3LLH6 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
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Oceania | Australien | 6 |
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Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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