STI5N52U Tech Spezifikatioune
STMicroelectronics - STI5N52U technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STI5N52U
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK | |
Serie | UltraFASTmesh™ | |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V | |
Power Dissipation (Max) | 70W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 16.9 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 525 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Tc) | |
Basis Produktnummer | STI5N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STI5N52U.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STI5N52U | STI57N65M5 | STI55NF03L | STI6N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Serie | UltraFASTmesh™ | MDmesh™ V | STripFET™ II | - |
Supplier Device Package | I2PAK | I2PAK (TO-262) | I2PAK | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 25 V | 4200 pF @ 100 V | 1265 pF @ 25 V | - |
Gate Charge (Qg) (Max) @ Vgs | 16.9 nC @ 10 V | 98 nC @ 10 V | 27 nC @ 4.5 V | - |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | - |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | - |
Basis Produktnummer | STI5N | STI57N | STI55 | - |
Vgs (Max) | ±30V | ±25V | ±16V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | - |
Entworf fir Source Voltage (Vdss) | 525 V | 650 V | 30 V | - |
Package protegéieren | Tube | Tube | Tube | - |
Power Dissipation (Max) | 70W (Tc) | 250W (Tc) | 80W (Tc) | - |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 5V @ 250µA | 2.5V @ 250µA | - |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V | 63mOhm @ 21A, 10V | 13mOhm @ 27.5A, 10V | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Tc) | 42A (Tc) | 55A (Tc) | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -60°C ~ 175°C (TJ) | - |
Eroflueden STI5N52U PDF DataDhusts an STMicroelectronics Dokumentatioun fir STI5N52U - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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