STH315N10F7-2 Tech Spezifikatioune
STMicroelectronics - STH315N10F7-2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STH315N10F7-2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | H2Pak-2 | |
Serie | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 60A, 10V | |
Power Dissipation (Max) | 315W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 12800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | |
Basis Produktnummer | STH315 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STH315N10F7-2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STH315N10F7-2 | STH320N4F6-6 | STH300NH02L-6 | STH310N10F7-6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 240 nC @ 10 V | 109 nC @ 10 V | 180 nC @ 10 V |
Serie | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Automotive, AEC-Q101, STripFET™ III | DeepGATE™, STripFET™ VII |
Basis Produktnummer | STH315 | STH320 | STH300 | STH310 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 1V @ 250µA | 3.8V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7, D²Pak (6 Leads + Tab) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | 200A (Tc) | 180A (Tc) | 180A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 12800 pF @ 25 V | 13800 pF @ 15 V | 7050 pF @ 15 V | 12800 pF @ 25 V |
Power Dissipation (Max) | 315W (Tc) | 300W (Tc) | 300W (Tc) | 315W (Tc) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 40 V | 24 V | 100 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 5V, 10V | 10V |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 60A, 10V | 1.3mOhm @ 80A, 10V | 1.2mOhm @ 80A, 10V | 2.5mOhm @ 60A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | H2Pak-2 | H2PAK-6 | H²PAK | H2PAK-6 |
Eroflueden STH315N10F7-2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STH315N10F7-2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.