STH180N4F6-2 Tech Spezifikatioune
STMicroelectronics - STH180N4F6-2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STH180N4F6-2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | H2Pak-2 | |
Serie | STripFET™ F6 | |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7735 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | STH180 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STH180N4F6-2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STH180N4F6-2 | STH180N10F3-2 | STH15NB50FI | STH160N4LF6-2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 180A (Tc) | 10.5A (Tc) | 120A (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ISOWATT-218-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V | 4.5mOhm @ 60A, 10V | 360mOhm @ 7.5A, 10V | 2.2mOhm @ 60A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7735 pF @ 25 V | 6665 pF @ 25 V | 3400 pF @ 25 V | 8130 pF @ 20 V |
Entworf fir Source Voltage (Vdss) | 40 V | 100 V | 500 V | 40 V |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 114.6 nC @ 10 V | 80 nC @ 10 V | 181 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 190W (Tc) | 315W (Tc) | 80W (Tc) | 150W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Supplier Device Package | H2Pak-2 | H2Pak-2 | ISOWATT-218 | H2Pak-2 |
Basis Produktnummer | STH180 | STH180 | STH15N | STH160 |
Serie | STripFET™ F6 | STripFET™ III | PowerMESH™ | DeepGATE™, STripFET™ VI |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 1V @ 250µA (Min) |
Eroflueden STH180N4F6-2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STH180N4F6-2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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