STFI7N80K5 Tech Spezifikatioune
STMicroelectronics - STFI7N80K5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STFI7N80K5
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 5V @ 100µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | I2PAKFP (TO-281) | |
| Serie | SuperMESH5™ | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V | |
| Power Dissipation (Max) | 25W (Tc) | |
| Package / Case | TO-262-3 Full Pack, I²Pak | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
| Basis Produktnummer | STFI7 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STFI7N80K5.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STFI7N80K5 | STFI6N80K5 | STFI4N62K3 | STFI6N62K3 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Serie | SuperMESH5™ | SuperMESH5™ | SuperMESH3™ | SuperMESH3™ |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 100 V | 270 pF @ 100 V | 550 pF @ 50 V | 875 pF @ 50 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Basis Produktnummer | STFI7 | STFI6N | STFI4N | STFI6N |
| Vgs (th) (Max) @ Id | 5V @ 100µA | 5V @ 100µA | 4.5V @ 50µA | 4.5V @ 50µA |
| Package protegéieren | Tube | Tube | Tube | Tube |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 800 V | 800 V | 620 V | 620 V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V | 1.6Ohm @ 2A, 10V | 2Ohm @ 1.9A, 10V | 1.2Ohm @ 2.8A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 4.5A (Tc) | 3.8A (Tc) | 5.5A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (Max) | ±30V | 30V | ±30V | ±30V |
| Supplier Device Package | I2PAKFP (TO-281) | I2PAKFP (TO-281) | I2PAKFP (TO-281) | I2PAKFP (TO-281) |
| Package / Case | TO-262-3 Full Pack, I²Pak | TO-262-3 Full Pack, I²Pak | TO-262-3 Full Pack, I²Pak | TO-262-3 Full Pack, I²Pak |
| Power Dissipation (Max) | 25W (Tc) | 25W (Tc) | 25W (Tc) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 10 V | 13 nC @ 10 V | 22 nC @ 10 V | 34 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden STFI7N80K5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STFI7N80K5 - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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