STFI11N65M2 Tech Spezifikatioune
STMicroelectronics - STFI11N65M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STFI11N65M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAKFP (TO-281) | |
Serie | MDmesh™ II Plus | |
Rds On (Max) @ Id, Vgs | 670mOhm @ 3.5A, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-262-3 Full Pack, I²Pak | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | |
Basis Produktnummer | STFI11N |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STFI11N65M2 | STFI10N65K3 | STFH13N60M2 | STFI13N60M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Serie | MDmesh™ II Plus | SuperMESH3™ | MDmesh™ | MDmesh™ II Plus |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V | 42 nC @ 10 V | 17 nC @ 10 V | 17 nC @ 10 V |
Package / Case | TO-262-3 Full Pack, I²Pak | TO-262-3 Full Pack, I²Pak | TO-220-3 Full Pack | TO-262-3 Full Pack, I²Pak |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 100 V | 1180 pF @ 25 V | 580 pF @ 100 V | 580 pF @ 100 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 100µA | 4V @ 250µA | 4V @ 250µA |
Basis Produktnummer | STFI11N | STFI10N | STFH13 | STFI13N |
Supplier Device Package | I2PAKFP (TO-281) | I2PAKFP (TO-281) | TO-220FP | I2PAKFP (TO-281) |
Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 600 V | 600 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | 10A (Tc) | 11A (Tc) | 11A (Tc) |
Vgs (Max) | ±25V | ±30V | ±25V | ±25V |
Power Dissipation (Max) | 25W (Tc) | 35W (Tc) | 25W (Tc) | 25W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 670mOhm @ 3.5A, 10V | 1Ohm @ 3.6A, 10V | 380mOhm @ 5.5A, 10V | 380mOhm @ 5.5A, 10V |
Eroflueden STFI11N65M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STFI11N65M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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