STF6N65M2 Tech Spezifikatioune
STMicroelectronics - STF6N65M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF6N65M2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220FP | |
| Serie | MDmesh™ | |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V | |
| Power Dissipation (Max) | 20W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 226 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
| Basis Produktnummer | STF6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF6N65M2.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STF6N65M2 | STF6N62K3 | STF6N90K5 | STF6N65K3 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 50µA | 5V @ 100µA | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Serie | MDmesh™ | SuperMESH3™ | MDmesh™ K5 | SuperMESH3™ |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 20W (Tc) | 30W (Tc) | 25W (Tc) | 30W (Tc) |
| Vgs (Max) | ±25V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 226 pF @ 100 V | 875 pF @ 50 V | - | 880 pF @ 50 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V | 1.28Ohm @ 2.8A, 10V | 1.1Ohm @ 3A, 10V | 1.3Ohm @ 2.8A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 650 V | 620 V | 900 V | 650 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 5.5A (Tc) | 6A (Tc) | 5.4A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V | 34 nC @ 10 V | - | 35 nC @ 10 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Basis Produktnummer | STF6 | STF6 | STF6 | STF6 |
Eroflueden STF6N65M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF6N65M2 - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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