STF31N65M5 Tech Spezifikatioune
STMicroelectronics - STF31N65M5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF31N65M5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | MDmesh™ V | |
Rds On (Max) @ Id, Vgs | 148mOhm @ 11A, 10V | |
Power Dissipation (Max) | 30W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | |
Basis Produktnummer | STF31 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF31N65M5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF31N65M5 | STF33N65M2 | STF33N60M6 | STF30NM60ND |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | 24A (Tc) | 25A (Tc) | 25A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 100 V | 1790 pF @ 100 V | 1515 pF @ 100 V | 2800 pF @ 50 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 600 V | 600 V |
Basis Produktnummer | STF31 | STF33 | STF33 | STF30N |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 148mOhm @ 11A, 10V | 140mOhm @ 12A, 10V | 125mOhm @ 12.5A, 10V | 130mOhm @ 12.5A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Power Dissipation (Max) | 30W (Tc) | 34W (Tc) | 35W (Tc) | 40W (Tc) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4.75V @ 250µA | 5V @ 250µA |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Serie | MDmesh™ V | MDmesh™ M2 | MDmesh™ M6 | FDmesh™ II |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 41.5 nC @ 10 V | 33.4 nC @ 10 V | 100 nC @ 10 V |
Vgs (Max) | ±25V | ±25V | ±25V | ±30V |
FET Feature | - | - | - | - |
Eroflueden STF31N65M5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF31N65M5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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