STF24N60M2 Tech Spezifikatioune
STMicroelectronics - STF24N60M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF24N60M2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220FP | |
| Serie | MDmesh™ II Plus | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
| Basis Produktnummer | STF24 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF24N60M2.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STF24N60M2 | STF24N60DM2 | STF23NM60N | STF24N60M6 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4.75V @ 250µA |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 18A (Tc) | 19A (Tc) | 17A (Tj) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Basis Produktnummer | STF24 | STF24 | STF23 | STF24 |
| Serie | MDmesh™ II Plus | FDmesh™ II Plus | MDmesh™ II | MDmesh™ M6 |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V | 1055 pF @ 100 V | 2050 pF @ 50 V | 960 pF @ 100 V |
| Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 29 nC @ 10 V | 60 nC @ 10 V | 23 nC @ 10 V |
| Power Dissipation (Max) | 30W (Tc) | 30W (Tc) | 35W (Tc) | 30W (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Supplier Device Package | TO-220FP | TO-220 Full Pack | TO-220FP | TO-220FP |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V | 200mOhm @ 9A, 10V | 180mOhm @ 9.5A, 10V | 190mOhm @ 8.5A, 10V |
Eroflueden STF24N60M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF24N60M2 - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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