STF21NM50N Tech Spezifikatioune
STMicroelectronics - STF21NM50N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF21NM50N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220FP | |
| Serie | MDmesh™ II | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
| Basis Produktnummer | STF21 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF21NM50N.
| Produktiounsattriff |  |
|
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|---|---|---|---|---|
| Part Number | STF21NM50N | STF21NM60ND | STF22N60DM6 | STF22NM60N |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Basis Produktnummer | STF21 | STF21 | STF22 | STF22 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 500 V | 600 V | 600 V | 600 V |
| Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | MDmesh™ II | FDmesh™ II | MDmesh™ M6 | MDmesh™ II |
| Vgs (Max) | ±25V | ±25V | ±25V | ±30V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 17A (Tc) | 15A (Tc) | 16A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Power Dissipation (Max) | 30W (Tc) | 30W (Tc) | 30W (Tc) | 30W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4.75V @ 250µA | 4V @ 100µA |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V | 1800 pF @ 50 V | 800 pF @ 100 V | 1300 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | 60 nC @ 10 V | 20 nC @ 10 V | 44 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V | 220mOhm @ 8.5A, 10V | 230mOhm @ 7.5A, 10V | 220mOhm @ 8A, 10V |
Eroflueden STF21NM50N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF21NM50N - STMicroelectronics.
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STF20U60CTaiwan Semiconductor| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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