STF15N60M2-EP Tech Spezifikatioune
STMicroelectronics - STF15N60M2-EP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF15N60M2-EP
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220FP | |
| Serie | MDmesh™ M2-EP | |
| Rds On (Max) @ Id, Vgs | 378mOhm @ 5.5A, 10V | |
| Power Dissipation (Max) | 25W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
| Basis Produktnummer | STF15 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF15N60M2-EP.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STF15N60M2-EP | STF15N65M5 | STF14N80K5 | STF15N95K5 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 100µA | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 22 nC @ 10 V | 22 nC @ 10 V | 40 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (Max) | ±25V | ±25V | ±30V | ±30V |
| Rds On (Max) @ Id, Vgs | 378mOhm @ 5.5A, 10V | 340mOhm @ 5.5A, 10V | 445mOhm @ 6A, 10V | 500mOhm @ 6A, 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Serie | MDmesh™ M2-EP | MDmesh™ V | MDmesh™ K5 | SuperMESH5™ |
| FET Feature | - | - | - | - |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 11A (Tc) | 12A (Tc) | 12A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | STF15 | STF15 | STF14 | STF15 |
| Power Dissipation (Max) | 25W (Tc) | 30W (Tc) | 30W (Tc) | 30W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 100 V | 816 pF @ 100 V | 620 pF @ 100 V | 900 pF @ 100 V |
| Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 800 V | 950 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STF15N60M2-EP PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF15N60M2-EP - STMicroelectronics.
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STF1409321YAF-S8USASTF15NM60NSTMicroelectronicsMOSFET N-CH 600V 14A TO220FP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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