STF140N6F7 Tech Spezifikatioune
STMicroelectronics - STF140N6F7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF140N6F7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | STripFET™ | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 35A, 10V | |
Power Dissipation (Max) | 33W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 70A (Tc) | |
Basis Produktnummer | STF140 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF140N6F7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF140N6F7 | STF14NM50N | STF140N8F7 | STF150N10F7 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Entworf fir Source Voltage (Vdss) | 60 V | 500 V | 80 V | 100 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 70A (Tc) | 12A (Tc) | 64A (Tc) | 65A (Tc) |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 35A, 10V | 320mOhm @ 6A, 10V | 4.3mOhm @ 32A, 10V | 4.2mOhm @ 55A, 10V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Basis Produktnummer | STF140 | STF14 | STF14 | STF15 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 33W (Tc) | 25W (Tc) | 35W (Tc) | 35W (Tc) |
Vgs (Max) | ±20V | ±25V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 100µA | 4.5V @ 250µA | 4.5V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V | 816 pF @ 50 V | 6340 pF @ 40 V | 8115 pF @ 50 V |
Operatioun Temperatur | 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Serie | STripFET™ | MDmesh™ II | DeepGATE™, STripFET™ VII | DeepGATE™, STripFET™ VII |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 27 nC @ 10 V | 96 nC @ 10 V | 117 nC @ 10 V |
Eroflueden STF140N6F7 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF140N6F7 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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