STD4NS25T4 Tech Spezifikatioune
STMicroelectronics - STD4NS25T4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD4NS25T4
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | MESH OVERLAY™ | |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | STD4N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD4NS25T4.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD4NS25T4 | STD50N03L | STD50NH02LT4 | STD50NH02L-1 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Serie | MESH OVERLAY™ | STripFET™ III | STripFET™ III | STripFET™ III |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | STD4N | STD50N | STD50N | STD50N |
Power Dissipation (Max) | 50W (Tc) | 60W (Tc) | 60W (Tc) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2A, 10V | 10.5mOhm @ 20A, 10V | 10.5mOhm @ 25A, 10V | 10.5mOhm @ 25A, 10V |
Entworf fir Source Voltage (Vdss) | 250 V | 30 V | 24 V | 24 V |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 14 nC @ 5 V | 24 nC @ 10 V | 24 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 40A (Tc) | 50A (Tc) | 50A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V, 10V | 5V, 10V | 5V, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 25 V | 1434 pF @ 25 V | 1400 pF @ 25 V | 1400 pF @ 25 V |
Supplier Device Package | DPAK | DPAK | DPAK | TO-251 (IPAK) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA |
Vgs (th) (Max) @ Id | 4V @ 250µA | 1V @ 250µA | 1.8V @ 250µA | 1.8V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STD4NS25T4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD4NS25T4 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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