STD4N90K5 Tech Spezifikatioune
STMicroelectronics - STD4N90K5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD4N90K5
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 5V @ 100µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DPAK | |
| Serie | MDmesh™ | |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1A, 10V | |
| Power Dissipation (Max) | 60W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 173 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 900 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | |
| Basis Produktnummer | STD4N90 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD4N90K5.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STD4N90K5 | STD4LN80K5 | STD4N80K5 | STD4N62K3 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (th) (Max) @ Id | 5V @ 100µA | 5V @ 100µA | 5V @ 100µA | 4.5V @ 50µA |
| Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1A, 10V | 2.6Ohm @ 1A, 10V | 2.5Ohm @ 1.5A, 10V | 1.95Ohm @ 1.9A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | 3A (Tc) | 3A (Tc) | 3.8A (Tc) |
| Basis Produktnummer | STD4N90 | STD4LN80 | STD4N80 | STD4N62 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 900 V | 800 V | 800 V | 620 V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 173 pF @ 100 V | 122 pF @ 100 V | 175 pF @ 100 V | 450 pF @ 50 V |
| Power Dissipation (Max) | 60W (Tc) | 60W (Tc) | 60W (Tc) | 70W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 10 V | 3.7 nC @ 10 V | 10.5 nC @ 10 V | 14 nC @ 10 V |
| Serie | MDmesh™ | MDmesh™ K5 | SuperMESH5™ | SuperMESH3™ |
Eroflueden STD4N90K5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD4N90K5 - STMicroelectronics.
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STD4A60SSTD4N8012500STD4NK50-1STMicroelectronicsSTD4N52K3STMicroelectronicsMOSFET N-CH 525V 2.5A DPAKSTD4NB40T4 MOSSTMicroelectronics| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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