STD2NK60Z-1 Tech Spezifikatioune
STMicroelectronics - STD2NK60Z-1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD2NK60Z-1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | SuperMESH™ | |
Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V | |
Power Dissipation (Max) | 45W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Tc) | |
Basis Produktnummer | STD2N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD2NK60Z-1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD2NK60Z-1 | STD2NK100Z | STD2NK70ZT4 | STD2NK70Z-1 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 4.5V @ 50µA | 4.5V @ 50µA | 4.5V @ 50µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA |
Basis Produktnummer | STD2N | STD2NK100 | - | STD2N |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | 499 pF @ 25 V | 280 pF @ 25 V | 280 pF @ 25 V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Tc) | 1.85A (Tc) | 1.6A (Tc) | 1.6A (Tc) |
Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V | 8.5Ohm @ 900mA, 10V | 7Ohm @ 800mA, 10V | 7Ohm @ 800mA, 10V |
Power Dissipation (Max) | 45W (Tc) | 70W (Tc) | 45W (Tc) | 45W (Tc) |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 16 nC @ 10 V | 11.4 nC @ 10 V | 11.4 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | SuperMESH™ | SuperMESH™ | SuperMESH™ | SuperMESH™ |
Supplier Device Package | I-PAK | DPAK | DPAK | I-PAK |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Entworf fir Source Voltage (Vdss) | 600 V | 1000 V | 700 V | 700 V |
Eroflueden STD2NK60Z-1 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD2NK60Z-1 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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