STD2N80K5 Tech Spezifikatioune
STMicroelectronics - STD2N80K5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD2N80K5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 100µA | |
Vgs (Max) | 30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | SuperMESH5™ | |
Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1A, 10V | |
Power Dissipation (Max) | 45W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 95 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | |
Basis Produktnummer | STD2N80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD2N80K5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD2N80K5 | STD2N95K5 | STD2LN60K3 | STD2N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Input Capacitance (Ciss) (Max) @ Vds | 95 pF @ 100 V | 105 pF @ 100 V | 235 pF @ 50 V | 340 pF @ 50 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 5V @ 100µA | 5V @ 100µA | 4.5V @ 50µA | 4.5V @ 50µA |
Serie | SuperMESH5™ | SuperMESH5™ | SuperMESH3™ | SuperMESH3™ |
Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | STD2N80 | STD2N95 | STD2LN60 | STD2N62 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Power Dissipation (Max) | 45W (Tc) | 45W (Tc) | 45W (Tc) | 45W (Tc) |
Vgs (Max) | 30V | 30V | ±30V | ±30V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1A, 10V | 5Ohm @ 1A, 10V | 4.5Ohm @ 1A, 10V | 3.6Ohm @ 1.1A, 10V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 2A (Tc) | 2A (Tc) | 2.2A (Tc) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 800 V | 950 V | 600 V | 620 V |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | 10 nC @ 10 V | 12 nC @ 10 V | 15 nC @ 10 V |
Eroflueden STD2N80K5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD2N80K5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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