STD16N50M2 Tech Spezifikatioune
STMicroelectronics - STD16N50M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD16N50M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252, (D-Pak) | |
Serie | MDmesh™ | |
Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V | |
Power Dissipation (Max) | 110W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | |
Basis Produktnummer | STD16 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD16N50M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD16N50M2 | STD16N65M5 | STD16N65M2 | STD16N60M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | 12A (Tc) | 11A (Tc) | 12A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | 1250 pF @ 100 V | 718 pF @ 100 V | 700 pF @ 100 V |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 110W (Tc) | 90W (Tc) | 110W (Tc) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V | 299mOhm @ 6A, 10V | 360mOhm @ 5.5A, 10V | 320mOhm @ 6A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 500 V | 650 V | 650 V | 600 V |
Basis Produktnummer | STD16 | STD16 | STD16 | STD16 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Serie | MDmesh™ | MDmesh™ V | MDmesh™ M2 | MDmesh™ M2 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V | 45 nC @ 10 V | 19.5 nC @ 10 V | 19 nC @ 10 V |
Supplier Device Package | TO-252, (D-Pak) | DPAK | DPAK | DPAK |
Eroflueden STD16N50M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD16N50M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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