STB85NF55T4 Tech Spezifikatioune
STMicroelectronics - STB85NF55T4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB85NF55T4
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | STripFET™ II | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | STB85 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB85NF55T4.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STB85NF55T4 | STB80PF55T4 | STB8NM60T4 | STB8N65M5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 258 nC @ 10 V | 18 nC @ 10 V | 15 nC @ 10 V |
Basis Produktnummer | STB85 | STB80P | STB8NM60 | STB8N65 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 650 V | 650 V |
Supplier Device Package | D2PAK | D2PAK | D2PAK | D²PAK (TO-263) |
Serie | STripFET™ II | STripFET™ II | MDmesh™ | MDmesh™ V |
Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V | 5500 pF @ 25 V | 400 pF @ 25 V | 690 pF @ 100 V |
Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 100W (Tc) | 70W (Tc) |
Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V | 18mOhm @ 40A, 10V | 1Ohm @ 2.5A, 10V | 600mOhm @ 3.5A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (Max) | ±20V | ±16V | ±30V | ±25V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 8A (Tc) | 7A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STB85NF55T4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB85NF55T4 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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