STB6NK90ZT4 Tech Spezifikatioune
STMicroelectronics - STB6NK90ZT4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB6NK90ZT4
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | SuperMESH™ | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2.9A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 60.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 900 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.8A (Tc) | |
Basis Produktnummer | STB6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB6NK90ZT4.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STB6NK90ZT4 | STB70NFS03LT4 | STB6NM60N | STB70N10F4 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 900 V | 30 V | 600 V | 100 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.8A (Tc) | 70A (Tc) | 4.6A (Tc) | 65A (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±30V | ±18V | ±25V | ±20V |
Supplier Device Package | D2PAK | D2PAK | D2PAK | D²PAK (TO-263) |
Gate Charge (Qg) (Max) @ Vgs | 60.5 nC @ 10 V | 30 nC @ 5 V | 13 nC @ 10 V | 85 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2.9A, 10V | 9.5mOhm @ 35A, 10V | 920mOhm @ 2.3A, 10V | 19.5mOhm @ 30A, 10V |
Serie | SuperMESH™ | STripFET™ | MDmesh™ II | DeepGATE™, STripFET™ |
Basis Produktnummer | STB6 | STB70N | STB6N | STB70N |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | 1440 pF @ 25 V | 420 pF @ 50 V | 5800 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V, 10V | 10V | 10V |
Power Dissipation (Max) | 140W (Tc) | 100W (Tc) | 45W (Tc) | 150W (Tc) |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | 1V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden STB6NK90ZT4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB6NK90ZT4 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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