STB60NH02LT4 Tech Spezifikatioune
STMicroelectronics - STB60NH02LT4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB60NH02LT4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | STripFET™ III | |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 70W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 24 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
| Basis Produktnummer | STB60N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB60NH02LT4.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STB60NH02LT4 | STB60NF10T4 | STB60NF06LT4 | STB60NF06T4 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 4V @ 250µA | 1V @ 250µA | 4V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (Max) | ±20V | ±20V | ±15V | ±20V |
| Supplier Device Package | D2PAK | D2PAK | D2PAK | D2PAK |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | 104 nC @ 10 V | 66 nC @ 4.5 V | 66 nC @ 10 V |
| Basis Produktnummer | STB60N | STB60N | STB60 | STB60 |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V | 23mOhm @ 40A, 10V | 14mOhm @ 30A, 10V | 16mOhm @ 30A, 10V |
| Power Dissipation (Max) | 70W (Tc) | 300W (Tc) | 110W (Tc) | 110W (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 80A (Tc) | 60A (Tc) | 60A (Tc) |
| Entworf fir Source Voltage (Vdss) | 24 V | 100 V | 60 V | 60 V |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 10V | 5V, 10V | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 15 V | 4270 pF @ 25 V | 2000 pF @ 25 V | 1810 pF @ 25 V |
| Serie | STripFET™ III | STripFET™ II | STripFET™ II | STripFET™ II |
Eroflueden STB60NH02LT4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB60NH02LT4 - STMicroelectronics.
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STB60NF10-1STMicroelectronicsMOSFET N-CH 100V 80A I2PAKSTB6B65M2STMicroelectronics| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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