STB50N65DM6 Tech Spezifikatioune
STMicroelectronics - STB50N65DM6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB50N65DM6
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | MDmesh™ DM6 | |
Rds On (Max) @ Id, Vgs | 91mOhm @ 16.5A, 10V | |
Power Dissipation (Max) | 250W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 52.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | |
Basis Produktnummer | STB50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB50N65DM6.
Produktiounsattriff | ||||
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Part Number | STB50N65DM6 | STB50N25M5 | STB55NF03LT4 | STB4N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Entworf fir Source Voltage (Vdss) | 650 V | 250 V | 30 V | 620 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 52.5 nC @ 10 V | 44 nC @ 10 V | 27 nC @ 4.5 V | 14 nC @ 10 V |
Power Dissipation (Max) | 250W (Tc) | 110W (Tc) | 80W (Tc) | 70W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK | D2PAK |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 10V |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | 5V @ 100µA | 1V @ 250µA | 4.5V @ 50µA |
Basis Produktnummer | STB50 | STB50N | STB55N | STB4N |
Vgs (Max) | ±25V | ±25V | ±16V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | 1700 pF @ 50 V | 1265 pF @ 25 V | 450 pF @ 50 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 91mOhm @ 16.5A, 10V | 65mOhm @ 14A, 10V | 13mOhm @ 27.5A, 10V | 1.95Ohm @ 1.9A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 28A (Tc) | 55A (Tc) | 3.8A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 175°C (TJ) | 150°C (TJ) |
Serie | MDmesh™ DM6 | MDmesh™ V | STripFET™ II | SuperMESH3™ |
Eroflueden STB50N65DM6 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB50N65DM6 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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