STB4NK60Z-1 Tech Spezifikatioune
STMicroelectronics - STB4NK60Z-1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB4NK60Z-1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK | |
Serie | SuperMESH™ | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V | |
Power Dissipation (Max) | 70W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | STB4NK60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB4NK60Z-1.
Produktiounsattriff | ||||
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Part Number | STB4NK60Z-1 | STB50N65DM6 | STB4NK60ZT4 | STB4N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V | 2300 pF @ 100 V | 510 pF @ 25 V | 450 pF @ 50 V |
Basis Produktnummer | STB4NK60 | STB50 | STB4NK60 | STB4N |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 33A (Tc) | 4A (Tc) | 3.8A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 600 V | 620 V |
Serie | SuperMESH™ | MDmesh™ DM6 | SuperMESH™ | SuperMESH3™ |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±30V | ±25V | ±30V | ±30V |
Supplier Device Package | I2PAK | D²PAK (TO-263) | D2PAK | D2PAK |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 4.75V @ 250µA | 4.5V @ 50µA | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | 52.5 nC @ 10 V | 26 nC @ 10 V | 14 nC @ 10 V |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V | 91mOhm @ 16.5A, 10V | 2Ohm @ 2A, 10V | 1.95Ohm @ 1.9A, 10V |
Power Dissipation (Max) | 70W (Tc) | 250W (Tc) | 70W (Tc) | 70W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STB4NK60Z-1 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB4NK60Z-1 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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