STB32N65M5 Tech Spezifikatioune
STMicroelectronics - STB32N65M5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB32N65M5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | MDmesh™ V | |
Rds On (Max) @ Id, Vgs | 119mOhm @ 12A, 10V | |
Power Dissipation (Max) | 150W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | |
Basis Produktnummer | STB32 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB32N65M5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STB32N65M5 | STB30NF20 | STB31N65M5 | STB33N60M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Entworf fir Source Voltage (Vdss) | 650 V | 200 V | 650 V | 600 V |
Serie | MDmesh™ V | STripFET™ | MDmesh™ V | MDmesh™ II Plus |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 30A (Tc) | 22A (Tc) | 26A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±25V | ±20V | ±25V | ±25V |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | 38 nC @ 10 V | 45 nC @ 10 V | 45.5 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 119mOhm @ 12A, 10V | 75mOhm @ 15A, 10V | 148mOhm @ 11A, 10V | 125mOhm @ 13A, 10V |
Power Dissipation (Max) | 150W (Tc) | 125W (Tc) | 150W (Tc) | 190W (Tc) |
Basis Produktnummer | STB32 | STB30 | STB31 | STB33 |
Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 100 V | 1597 pF @ 25 V | 1865 pF @ 100 V | 1781 pF @ 100 V |
Supplier Device Package | D2PAK | D2PAK | D²PAK (TO-263) | D²PAK (TO-263) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden STB32N65M5 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB32N65M5 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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